Nanjing, China | August 14-16, 2021

Invited Speakers


Assoc. Prof. Jun Wu, Southeast University, China

Biography: Dr Jun Wu received his MSc and PhD degree from Southeast University, China. From 2010 to 2012, he was a Visiting Scholar at University of California in Los Angeles, USA. He worked at Singapore-MIT Alliance as a Research Fellow from January 2013 to July 2013. Since 2014, he joined Southeast University and served as Vice Dean, School of Electronic Science and Engineering.
Dr Wu’s main research interests involve stretchable sensors and flexible hybrid electronic systems, aiming to provide potential solutions for body area network. He mainly explores human-based applications including human-machine interfaces, human behavior monitoring and analysis, health monitoring, smart home, and Industrial Internet of Things (IIoT) based on flexible sensors and electronic systems. Dr. Wu had published more than 30 high-quality papers in international journals and conference. Besides, she served as reviewers for many international journals, such as, ACS Nano, Applied Physics Letters, Small, Organic Electronics, Optics Letters, and Scientific Reports etc.

Prof. Shumin Xiao, Harbin Institute of Technology, Shenzhen, China

Biography: Professor Shumin Xiao received his MSc degree from Fudan University, China and PhD degree from Purdue University, USA. He joined Harbin Institute of Technology in 2011 as a professor after finish her post-doctoral research at Purdue University, USA. Since 2012, she joined Harbin Institute of Technology, Shenzhen, China. Professor Shumin Xiao’s main research interests include Integrated optoelectronic devices, semiconductor devices, nano Photonics and metamaterials and other new optical materials and devices. Prof. Xiao had published more than 100 high-quality papers in international journals and conference. Such as Nature, Advanced Materials, ACS Nano, etc. Since 2010, she servied as reviewers for many international journals, such as Optics Letters, Optics Express, Applied Physics B, JOSA B, Scientific Reports, Nano Letters, Optics Communications, etc. And Prof. Xiao is a member of Optical Society of America (OSA).

Prof. Byung Seong Bae, Hoseo University, Korea

Biography: Byung Seong Bae received the B.S. degree in atomic nuclear engineering from the Seoul National University, Seoul, Korea, in 1984 and the M.S. and Ph.D. degrees in applied physics from the Korea Advanced Institute of Science and Technology, Seoul, Korea in 1986, and 1991, respectively. Between 1991 and 1998, he worked at the Samsung Electronics on the development of amorphous and poly-silicon TFT LCD with integrated driver. From 1999 to 2003, he set up the high-temperature poly-silicon TFT LCD factory and developed micro-display for projection display at ILJIN Display. Since 2006, he is a Professor, School of Electronics and Display Engineering of the Hoseo University, Asan, Korea.
Speech Topic: Decoder Type Scan Driver Suitable for Flexible and Stretchable Display
Abstract: Various kind of thin-film transistors (TFTs) are being used for display backplane such as amorphous silicon TFT, low temperature poly silicon TFT and oxide TFT. For displaying images on screen, scan and data driver are required. Scan driver is usually integrated on the backplane using TFTs. For the flexible and stretchable backplanes, the stable scan driver circuit is necessary under folding or stretching conditions which change the electrical characteristics of devices. The strategy for such scan drive is, therefore, decrease the number of TFTs to avoid malfunction under stretching or folding. We proposed a scan driver reducing the number of TFTs by increased metal wire. We optimized the number of metal wires for scan driver with minimum number of TFTs. In the case of IGZO TFTs, depletion type transfer characteristics are often obtained, which make it difficult to operate well the gate driver. For depletion type TFTs, the special circuit is necessary because the conventional circuits are designed for enhancement type TFTs and malfunction with depletion type TFTs. We proposed gate drive circuit which operate well for both the depletion and enhancement type TFTs. IGZO (In-Ga-Zn Oxide) TFT process are used for the fabrication of the circuits. Figure 1 shows the basic concept of the proposed circuit and timing diagram. With block selection signal PSs, the scan pulse signal SSs are applied to give scan outputs. Based on that circuit, we improved the circuit by adding a bootstrapping part, which can enhance the driving ability. However, the circuit operates with only enhancement type TFTs not with depletion type TFTs. Finally, we developed the circuit which operate well for both the enhancement and depletion type TFTs.

Prof. Razika ZAIR TALA-IGHIL, University M’hamed Bougara of Boumerdes, Algeria

Biography: Pr Razika ZAIR TALA-IGHIL received her PhD in materials physics from University M'hamed Bougara of Boumerdes UMBB in 2007 and the academic accreditation in 2013 at the same university. She is Full Professor of physics at the Institute of Electrical & Electronic Engineering IGEE and head of the research team "Advanced Materials" at Research Unit Of Materials, Process And Environment URMPE in University M’hamed Bougara of Boumerdes. Before being a Teacher-Researcher at the university, she was permanent researcher in Algiers at UDTS (Silicon Technology Development Unit) from 2000 to 2009. Her research is based mainly on materials for solar cells such as silicon, transparent conducting oxides TCO (tin oxide, zinc oxide), screen printed metallic contact, TLM technique in addition to the study of materials for photocatalysis and environmental cleaning. The main orientation of her research team is the use and development of nanomaterials. She authored more than 40 publications and 60 international communications, has a patent in solar cell fabrication with tin oxide and is supervising many doctorate students. Reviewer in many journals: Solar Energy Materials & Solar Cells, Journal of Renewable and Sustainable Energy, Materials Research Express, Surface & Coatings Technology, …etc.
Researchgate profile:
Speech Topic: Effect of basic pH of starting solution on ZnO nanoparticule Prepared by the Hydrothermal Method and their Photocatalytic activities
Abstract: Zinc oxide nanoparticules have been successfully prepared via hydrothermal process in three pH values. The effect of pH values (9,10 and 11) on the particules properties and thier photocatalytic performance are discussed. The samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopies. FTIR studies proved the presence of ZnO bonding and purity of the samples. ZnO structures are polycrystalline hexagonal wurtzite structure with high crystal quality, were observed corroborating with XRD and Raman measurements. Grain size was found to be increases with the increase of pH value. Methylene Blue (MB) and Methyl orange dyes photocatalytic degradation was found increases with pH increases, reaching almost 95% and 64% after 30min under UV irradiation for MB and MO respectively. The highest photocatlytic activity was obtained from powders with average crystallite size of 51 nm prepared under pH11 and hydrothermally treated at 150°C for 8 h.

Assoc. Prof. Damian C Onwudiwe, North-West University, South Africa

Biography: Damian C Onwudiwe obtained his PhD in Chemistry (Inorganic and Materials) at the University of Fort-Hare, South Africa in 2011. He gained a Postdoctoral research fellowship at North-West University, Potchefstroom campus, before becoming a Senior Lecturer in the Mafikeng campus in 2015 and was promoted to Associate Professorship in 2019. He is the group Leader of the Inorganic and Materials Chemistry Research Group of the North-West University, South Africa. His area of research encompasses Inorganic synthesis, the controlled manipulation of materials' physical and chemical properties, advanced oxidation processes, engineering of nanostructured materials, and advanced functional materials for energy application. He has published several research papers on diverse aspects of Inorganic and Materials chemistry and he is a recipient of different research awards including TWAS-DFG fellowship as a visiting scientist to University of Cologne, Germany; the Royal Society of Chemistry (RSC) Research Fellowship to Kings College London, UK and the institutional Capacity Development Grant (UCDG). Damian is the principal investigator of different NRF funded projects, and has collaboration at both National and international levels. He is a Faculty award recipient in recognition of his exceptional research track records and immense contribution in terms of innovative research and development in the Focus Area of Materials Science Innovation and Modelling. He is a college member of the International Development Peer Review of the United Kingdom Research Initiative (UKRI) and also a National Research Foundation (NRF) of South Africa rated researcher in the Y2 category. Damian is on a Topics and Guest Editorial Boards for different journals including Frontiers in Materials and Catalysts.
Speech Topic: Solvothermal synthesis of Cu2SnS3 nanoparticles and the electrochemical studies
Abstract: The use of earth abundant elements such as copper, zinc, tin and sulphur for the synthesis of nanomaterials for different applications is fast gaining research interest in semiconductor technology. Their low cost, non-toxicity, and economic viability make them potent alternatives for elements such as Cd and Pb that are used in solar cells. The current study reports ternary Cu2SnS3 (CTS) nanostructures prepared by a simple solvothermal method using copper(II) dithiocarbamate and organotin dithiocarbamate as precursor complexes. The ternary nanostructures were prepared in the presence of oleic acid as the capping agent at 220 °C. The concentration of the copper complex was varied in order to investigate the effect of the change in the concentration of the complex on the structural, morphological and optical evolution of CTS particles. Spherically shaped pure phase monoclinic Cu2SnS3 nanoparticles were obtained at equimolar concentration of the precursor complexes. However, emergence of mixed phases of Cu2SnS3 and Cu4SnS4 at higher concentration of the copper complex was observed. UV-visible spectroscopic studies indicated band gap energies in the range 1.0 -1.5 eV, which were very close to the optimal value required for an absorber material for solar energy conversion in photovoltaics. Hence, in order to understand the electron migration process, the redox responses of the CTS modified electrodes was studied using cyclic voltammetry (CV), and their electroactive surface area (A, cm2) were also examined. The results reveal that the CTS possessed good electrochemical property, indicating the potential of the nanomaterial for further study in solar cell applications.